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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed double diode FEATURES * Small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 50 V * Repetitive peak reverse voltage: max. 60 V * Repetitive peak forward current: max. 450 mA. APPLICATIONS * High-speed switching in thick and thin-film circuits. DESCRIPTION The BAV74 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. Top view umns BAV74 PINNING PIN 1 2 3 anode (a1) anode (a2) cathode DESCRIPTION 2 1 2 3 3 MAM108 1 MARKING TYPE NUMBER BAV74 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W: Made in China. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 14 2 total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW C C single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 - - - - - 60 50 215 125 450 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT MARKING CODE(1) JA* Fig.1 Simplified outline (SOT23) and symbol. Philips Semiconductors Product specification High-speed double diode ORDERING INFORMATION TYPE NUMBER BAV74 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BAV74 VERSION SOT23 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 100 mA IR reverse current see Fig.5 VR = 25 V VR = 50 V VR = 25 V; Tj = 150 C VR = 50 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 30 0.1 30 100 1.5 nA A A A pF ns 715 855 1.0 mV mV V PARAMETER CONDITIONS MAX. UNIT when switched from IF = 10 mA to 4 IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 Vfr forward recovery voltage V THERMAL CHARACTERISTICS SYMBOL Rth(j-tp) Rth(j-a) Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W 2004 Jan 14 3 Philips Semiconductors Product specification High-speed double diode GRAPHICAL DATA BAV74 300 IF (mA) 200 MBD033 handbook, halfpage 300 MBG383 IF (mA) (1) (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 100 T amb ( C) o 0 200 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Jan 14 4 Philips Semiconductors Product specification High-speed double diode BAV74 105 handbook, halfpage IR (nA) 10 4 MBG376 handbook, halfpage 0.8 MBG446 Cd (pF) 0.6 103 (1) (2) (3) 0.4 10 2 0.2 10 0 0 100 Tj (oC) 200 0 4 8 12 VR (V) 16 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Jan 14 5 Philips Semiconductors Product specification High-speed double diode BAV74 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R S = 50 D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Jan 14 6 Philips Semiconductors Product specification High-speed double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads BAV74 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 Jan 14 7 Philips Semiconductors Product specification High-speed double diode DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAV74 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Jan 14 8 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp9 Date of release: 2004 Jan 14 Document order number: 9397 750 12392 |
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